Investigation of AlInN barrier ISFET structures with GaN capping for pH detection

Electrical Performances of AlInN/GaN HEMTs. A Comparison with AlGaN/GaN HEMTs with similar technological process

detection of volatile compounds of medicinal plants with some nano-sorbents using modified or new methodologies and investigation of antioxidant activity of their methanolic extracts

in this work, a novel and fast method for direct analysis of volatile compounds (davc) of medicinal plants has been developed by holding a filament from different parts of a plant in the gc injection port. the extraction and analysis of volatile components of a small amount of plant were carried out in one-step without any sample preparation. after optimization of temperature, extraction time a...

investigating the feasibility of a proposed model for geometric design of deployable arch structures

deployable scissor type structures are composed of the so-called scissor-like elements (sles), which are connected to each other at an intermediate point through a pivotal connection and allow them to be folded into a compact bundle for storage or transport. several sles are connected to each other in order to form units with regular polygonal plan views. the sides and radii of the polygons are...

Adaptive Stochastic Classifier for Noisy pH-ISFET Measurements

Sensor drift is an inevitable measurement problem and is particularly significant in the long term. The common practice is to have an auto-calibration facility (including standard buffers or accurate integrated actuators) mounted on the monitoring system. However, this approach may not be feasible when the monitoring system is miniaturized to the size of a capsule. In this paper, we develop an ...

Performance Analysis of AlInN/GaN Underlap DG MOSFET for varying Underlap and Gate length

In this work, we investigate the performance of 18nm gate length AlInN/GaN Heterostructure Underlap Double Gate MOSFETs, using 2D Sentaurus TCAD simulation. The simulation is done using the hydrodynamic model and interface traps are also considered. Due to large twodimensional electron gas (2DEG) density and high velocity, the maximal drain current density achieved is very high. Extensive devic...